? semiconductor components industries, llc, 2014 october, 2014 ? rev. 2 1 publication order number: emd4dxv6/d emd4dxv6 dual bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the emd4dxv6t1 series, two complementary brt devices are housed in the sot?563 package which is ideal for low power surface mount applications where board space is at a premium. features ? simplifies circuit design ? reduces board space ? reduces component count ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these are pb?free devices maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c (note 1) derate above 25 c (note 1) p d 357 2.9 mw mw/ c thermal resistance, junction-to-ambient (note 1) r ja 350 c/w total device dissipation t a = 25 c (note 1) derate above 25 c p d 500 4.0 mw mw/ c thermal resistance, junction-to-ambient (note 1) r ja 250 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?4 board with minimum mounting pad. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) http://onsemi.com sot?563 case 463a style 1 u7 = specific device code m = date code = pb?free package marking diagram device package shipping ? ordering information ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. emd4dxv6t5g sot?563 (pb?free) 8000 / tape & reel emd4dxv6t1g sot?563 (pb?free) 4000 / tape & reel (note: microdot may be in either location) u7 m 1 1 6 NSVEMD4DXV6T5G sot?563 (pb?free) 8000 / tape & reel
emd4dxv6 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit q1 transistor: pnp off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v cb = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0, i c = 5.0 ma) i ebo ? ? 0.2 madc on characteristics collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain (v ce = 10 v, i c = 5.0 ma) h fe 80 140 ? collector?emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 7.0 10 13 k resistor ratio r1/r2 0.17 0.21 0.25 q2 transistor: npn off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v cb = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0, i c = 0 ma) i ebo ? ? 0.1 madc on characteristics collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain (v ce = 10 v, i c = 5.0 ma) h fe 80 140 ? collector?emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 32.9 47 61.1 k resistor ratio r1/r2 0.8 1.0 1.2 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 833 c/w
emd4dxv6 http://onsemi.com 3 typical electrical characteristics ? emd4dxv6 pnp transistor 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1520 2530 3540 4550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c i c , collector current (ma) 0 20406080 v ce(sat) , maximum collector voltage (volts) figure 3. dc current gain 1 10 100 i c , collector current (ma) figure 4. output capacitance figure 5. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 6. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a =-25 c 75 c 75 c
emd4dxv6 http://onsemi.com 4 typical electrical characteristics ? emd4dxv6 npn transistor v ce(sat), maximum collector voltage (volts) figure 7. v ce(sat) vs. i c 0 204060 80 10 1 0.1 0.01 i c , collector current (ma) i c /i b = 10 t a = ?25 c 75 c 25 c figure 8. dc current gain 1000 10 i c , collector current (ma) 100 10 110 0 v ce = 10 v h fe, dc current gain (normalized) t a = 75 c ?25 c 25 c figure 9. output capacitance 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) f = 1 mhz l e = 0 a t a = 25 c c ob, capacitance (pf) 024681 0 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) figure 10. output current vs. input voltage v o = 5 v i c, collector current (ma) t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 11. input voltage vs. output current v o = 0.2 v v in, input voltage (volts) 75 c t a = ?25 c 25 c
emd4dxv6 http://onsemi.com 5 package dimensions sot?563, 6 lead case 463a issue f h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches e m 0.08 (0.003) x b 6 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 style 1: pin 1. emitter 1 2. base 1 3. collector 2 4. emitter 2 5. base 2 6. collector 1 p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 emd4dxv6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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